PART |
Description |
Maker |
APT12040JVR |
POWER MOS V 1200V 26A 0.400 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
|
ADPOW[Advanced Power Technology]
|
APT12040L2LL |
POWER MOS 7 1200V 30A 0.400 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
|
Advanced Power Technology Ltd.
|
AOK20S60 |
600V 20A a MOS Power Transistor
|
Alpha & Omega Semiconductors
|
APT12067B2LL APT12067LLL |
POWER MOS 7 1200V 18A 0.670 Ohm
|
Advanced Power Technology
|
APT12045L2VR |
POWER MOS V 1200V 26A 0.450 Ohm
|
Advanced Power Technology
|
RJH1CM6DPQ-E013 |
1200V - 20A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
RJK1054DPB-00-J5 |
100V, 20A, 22m max Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
APT8043SLL APT8043BLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 THYRISTOR PROTECT BIDIR 30A SMB 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 POWER MOS 7 800V 20A 0.430 Ohm
|
Advanced Power Technolo... Advanced Power Technology, Ltd.
|
RJK60S5DPQ-E0 RJK60S5DPQ-E0-T2 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK60S5DPP-E0-T2 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK60S5DPE-00-J3 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
SPA5551 SPA555N |
20A / 1000 - 1200V SiC SCHOTTKY SINGLE PHASE BRIDGE
|
Solid States Devices, Inc SOLID STATE DEVICES INC
|